SML50EUZ12B Datasheet, PDF (1/2 Pages) Seme LAB – Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp

SEME
LAB
TO-247 Package
Back of Case
Cathode
SML
50EUZ12B
1- Cathode
2- Anode
1
2
See package outline for mechanical data and more details
Key Parameters
V_R
(max)
V_F
(typ)
I_F
(max)
t_rr
(max)
1200V
3.0V
50A
50ns
SML50EUZ12B
Enhanced Ultrafast Recovery Diode
1200 Volt, 50 Amp
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
BENEFITS
l Very fast recovery for low switching losses
l Ultra soft recovery with low EMI generation
l High dynamic ruggedness under all conditions
l Low temperature dependency
l Low on-state losses with positive temperature coefficient
l Stable blocking voltage and low leakage current
l Avalanche rated for high reliability circuit operation
APPLICATIONS
l Freewheeling Diode for IGBTs and MOSFETs
l Uninterruptible Power Supplies UPS
l Switch Mode Power Supplies SMPS
l Inverse and Clamping Diode
l Snubber Diode
l Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
V_RRM
V_R
I_FAV
I_FSM(surge)
I_FS(surge)
P_D
W_AVL
T_j ,T_STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current (10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy (L=40mH)
Operating & Storage Junction Temperature
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
1200V
1200V
50A
125A
500A
155W
40mJ
-55 to 150°C
Prelim 8/00