SML50A21_07 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML50A21
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
Pin 1 – Gate
2
3
(case)
3.84 (0.151)
4.09 (0.161)
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Case – Drain
V_DSS
I_D(cont)
R_DS(on)
500V
21A
0.220Ω
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
V_GSM
Gate – Source Voltage Transient
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
500
V
21
A
84
A
±30
V
±40
235
W
1.88
W/°C
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
–55 to 150
°C
300
21
A
30
mJ
1300
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T_J = 25°C, L = 5.90mH, R_G = 25Ω, Peak I_L = 21A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5963
Issue 1