SML5020BN Datasheet, PDF (1/2 Pages) Seme LAB – 4TH GENERATION MOSFET

SEME
LAB
SML5020BN
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
3.55 (0.140)
3.81 (0.150)
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
V_DSS
I_D(cont)
R_DS(on)
500V
28.0A
0.20W
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
Total Power Dissipation @ T_case = 25°C
P_D
Derate Linearly
T_J , T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
STATIC ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
BV_DSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
m V_GS = 0V , I_D = 250 A
I_DSS
I_GSS
V_GS(TH)
Zero Gate Voltage Drain Current
(V_GS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
V_DS = V_DSS
V_DS = 0.8V_DSS , T_C = 125°C
V_GS = ±30V , V_DS = 0V
V_DS = V_GS , I_D = 1.0mA
I_D(ON)
R_DS(ON)
On State Drain Current ²
Drain – Source On State Resistance ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
V_GS = 10V , I_D = 0.5 I_D [Cont.]
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
m 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
500
28
112
±30
360
2.9
–55 to 150
300
V
A
A
V
W
W/°C
°C
Min. Typ. Max. Unit
500
V
250 _mA
1000
±100 nA
2
4V
28
A
0.20 W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 6/94