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SML40L57 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |||
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SML40L57
TOâ264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
19.51 (0.768)
26.49 (0.807)
3.10 (0.122)
3.48 (0.137)
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
123
2.29 (0.090)
2.69 (0.106)
2.79 (0.110)
3.18 (0.125)
VDSS
ID(cont)
RDS(on)
400V
57A
0.070W
0.48 (0.019)
0.84 (0.033)
2.59 (0.102)
3.00 (0.118)
0.76 (0.030)
1.30 (0.051)
5.45 (0.215) BSC
2 plcs.
Pin 1 â Gate
Pin 2 â Drain
Pin 3 â Source
⢠Faster Switching
⢠Lower Leakage
⢠100% Avalanche Tested
⢠Popular TOâ264 Package
D
G
S
StarMOS is a new generation of high voltage
NâChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain â Source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current 1
VGS
Gate â Source Voltage
VGSM
Gate â Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063â from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W 2) Starting TJ = 25°C, L = 1.54mH, RG = 25 , Peak IL = 57A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
400
57
228
±30
±40
520
4.16
â55 to 150
300
57
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
6/99
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