SML400HB01MF Datasheet, PDF (1/9 Pages) Seme LAB – HIGH PERFORMANCE POWER SEMICONDUCTORS

SML400HB01MF
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
-Mosfet module
Maximum rated values/Electrical Properties
Source-drain voltage V_DSS
DC Collector Current I_D25
Repetitive peak Drain Current
Total Power Dissipation
Tj=25C to 175C
Rgs=1MΩ
Tc=25C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
Tc=25C
V_DSS
I_c, nom
Ic
I_crm
P_tot
100
V
400
A
400
600
A
1700 W
Gate-emitter peak voltage
Repetitive Peak
Forward Current
Isolation voltage
Continuous
Transient
tp=1msec
RMS, 50Hz, t=1min
V_GS
+/-20 V
=/-30 V
I_frm
600
A
V_isol
2500 V
Drain-source breakdown I_D=250µA,V_GS=0V,
voltage
Tc=25C
MIN TYP MAX
BV_DSS 100
V
Gate Threshold voltage I_D=8mA,V_DS=V_GS, Tvj=25C Vge_(th) 3.0
5
V
f=1MHz,Tvj=25C,Vgs=0V,V_DS=0V
15200
pF
5800
pF
1720
pF
Tvj=25C,V_DS=0.5V_DSS,ID=0.5I_D25,V_GS=10V 470
nC
100
nC
270
nC
Gate-source leakage
current
Drain source leakage
current
V_GS=+/-20V,
V_GS=0V,Tvj=25C
V_DS=V_GS=20V,
Tvj=25C
Tvj=150C
Tvj=175C
I_GSS
1 +/-200 nA
I_DSS
25 µA
1 mA
5 mA