SML30J70 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML30J70
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
1
2
W = ^{4 .1 (0 .1 6 1 )}
4 .3 (0 .1 6 9 )
H=
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
R
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4
3
3.3 (0.129)
3.6 (0.143)
14.9 (0.587)
15.1 (0.594)
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
38.0 (1.496)
38.2 (1.504)
R
=
4.0 (0.157)
(2 Places)
S
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
D
S
G
D
* Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
G
S
V_DSS
I_D(cont)
R_DS(on)
300V
70A
0.040Ω
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT–227 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
V_GSM
Gate – Source Voltage Transient
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T_J = 25°C, L = 1.02mH, R_G = 25Ω, Peak I_L = 70A
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
300
70
280
±30
±40
450
3.6
–55 to 150
300
70
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
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