SML300HB12GG Datasheet, PDF (1/7 Pages) Seme LAB – HIGH PERFORMANCE POWER SEMICONDUCTORS

SML300HB12GG
Attributes:
-Aerospace build standard
-High reliability
-Lightweight
-Cu and metal matrix base plate versions
(pin finned versions available)
-AlN isolation
-Trench gate igbts
Maximum rated values/Electrical Properties
Collector-emitter voltage
Vce
1200
V
DC collector current
Tc=70C, Tvj=175C
I_c, nom
320
A
Tc=25C,Tvj=175C
Ic
455
Repetitive peak collector current tp=1msec,Tc=80C
I_crm
600
A
Total power dissipation
Tc=25C
P_tot
850
W
Gate-emitter peak voltage
DC forward diode
current
Repetitive peak
forward current
I²t value per diode
Isolation test voltage
V_ges
I_f
tp=1msec
I_frm
Vr=0V, tp=10msec,
Tvj=125C
I^2t
Tvj=150C
RMS, 50Hz, t=1min
V_isol
+/-20
V
400
A
800
A
11000
10500
2500
A²sec
V
Collector-emitter saturation
voltage
Ic=300A,Vge=15V, Tc=25C
Ic=300A,Vge=15V,Tc=125C
Ic=300A,Vge=15V,Tc=150C
V_ce(sat)
1.7 2.15 V
2.0 2.45
Gate threshold voltage
Ic=6.4mA,Vce=Vge, Tvj=25C Vge_(th) 5.0 5.8 6.5 V
Input capacitance
f=1MHz,Tvj=25C,Vce=25V,
C_ies
21.5
nF
Vge=0V
Reverse transfer capacitance f=1MHz,Tvj=25C,Vce=25V,
C_res
0.98
nF
Vge=0V
Collector emitter cut off
current
Vce=1200V,Vge=0V,Tvj=25C I_ces
Vce=1200,Vge=0V,Tvj=125C
0.3 mA
mA
Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C
I_ges
400 nA