SML300HB06 Datasheet, PDF (1/7 Pages) Seme LAB – HIGH PERFORMANCE POWER SEMICONDUCTORS

SML300HB06
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
-trench gate igbts
Maximum rated values/ Electrical Properties
Collector-emitter Voltage
DC Collector Current
Repetitive peak Collector Current
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
Vce
I_c, nom
Ic
I_crm
Total Power Dissipation
Tc=25C
P_tot
600
V
300
A
400
600
A
1250
W
Gate-emitter peak voltage
DC Forward Diode
Current
Repetitive Peak
Forward Current
I²t value per diode
Isolation voltage
V_ges
I_f
tp=1msec
I_frm
Vr=0V, tp=10msec,
Tvj=125C
I^2t
Tvj=150C
RMS, 50Hz, t=1min
V_isol
+/-20
V
300
A
600
A
8400
7900
2500
A²sec
V
Collector-emitter saturation
voltage
Ic=300A,Vge=15V, Tc=25C
Ic=300A,Vge=15V,Tc=125C
Ic=300A,Vge=15V,Tc=150C
V_ce(sat)
1.45 1.9 V
1.6
1.7
Gate Threshold voltage
Ic=4.8mA,Vce=Vge, Tvj=25C Vge_(th) 4.9 5.8 6.5 V
Input capacitance
f=1MHz,Tvj=25C,Vce=25V,
C_ies
Vge=0V
19
nF
Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V,
C_res
Vge=0V
0.57
nF
Collector emitter cut off
current
Vce=600V,Vge=0V,Tvj=25C I_ces
Vce=600V,Vge=0V,Tvj=125C
1 5 mA
1
mA
Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C
I_ges
400 nA