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SML20W65 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |||
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SML20W65
TOâ267 Package Outline.
Dimensions in mm (inches)
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
200V
65A
0.026â¦
D
G
S
⢠Faster Switching
⢠Lower Leakage
⢠TOâ267 Hermetic Package
StarMOS is a new generation of high voltage
NâChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
ID
IDM
Drain â Source Voltage
Continuous Drain Current 3
Pulsed Drain Current 1 3
VGS
Gate â Source Voltage
VGSM
Gate â Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063â from Case for 10 Sec.
Avalanche Current 1 3 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 1.18mH, RG = 25â¦, Peak IL = 65A
3) Maximum current limited by package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
200
65
260
±30
±40
400
3.2
â55 to 150
300
65
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
6/99
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