SML20L100 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML20L100
TO–264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
19.51 (0.768)
26.49 (0.807)
3.10 (0.122)
3.48 (0.137)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
123
2.29 (0.090)
2.69 (0.106)
2.79 (0.110)
3.18 (0.125)
V_DSS
I_D(cont)
R_DS(on)
200V
100A
0.022W
0.48 (0.019)
0.84 (0.033)
2.59 (0.102)
3.00 (0.118)
0.76 (0.030)
1.30 (0.051)
5.45 (0.215) BSC
2 plcs.
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–264 Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
V_GSM
Gate – Source Voltage Transient
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W 2) Starting T_J = 25°C, L = 500µH, R_G = 25 , Peak I_L = 100A
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
200
100
400
±30
±40
520
4.16
–55 to 150
300
100
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
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