SML200HB12 Datasheet, PDF (1/7 Pages) Seme LAB – HIGH PERFORMANCE POWER SEMICONDUCTORS

SML200HB12
Attributes:
-Aerospace build standard
-High reliability
-Lightweight
-Metal matrix base plate
-AlN isolation
-Trench gate igbts
Maximum rated values/Electrical Properties
Collector-emitter Voltage
DC Collector Current
Repetitive peak Collector Current
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
V_ce
I_c, nom
Ic
I_crm
Total Power Dissipation
Tc=25C
P_tot
1200
V
200
A
295
400
A
2380
W
Gate-emitter peak voltage
V_ges
+/-20
V
DC Forward Diode
Current
Repetitive Peak
Forward Current
I²t value per diode
I_f
200
A
tp=1msec
I_frm
400
A
Vr=0V, tp=10msec,
Tvj=125C
I^2t
7800 A²sec
Isolation voltage
RMS, 50Hz, t=1min
V_isol
2500
V
Collector-emitter saturation Ic=200A,Vge=15V, Tc=25C
voltage
Ic=200A,Vge=15V,Tc=125C
V_ce(sat)
1.7 2.15 V
2.0
Gate Threshold voltage
Ic=8mA,Vce=Vge, Tvj=25C Vge_(th) 5.0 5.8 6.5 V
Input capacitance
f=1MHz,Tvj=25C,Vce=25V,
C_ies
14
nF
Vge=0V
Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V,
C_res
0.5
nF
Vge=0V
Collector emitter cut off
current
Vce=1200V,Vge=0V,Tvj=25C I_ces
1 5 mA
Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C
I_ges
400 nA