SML10T75XX Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML10T75XX
T247clip Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
2
0.40 (0.016)
0.79 (0.031)
123
1.01 (0.040)
1.40 (0.055)
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
2.13 (0.084)
V_DSS
I_D(cont)
R_DS(on)
100V
100A
0.011W
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
Pin 2 – Drain
D
5.45 (0.215)
BSC
2plcs
Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• New T247clip Package
(Clip–mounted TO–247 Package)
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
100
V
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
100
A
400
A
V_GS
V_GSM
Gate – Source Voltage
Gate – Source Voltage Transient
±30
V
±40
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
520
W
4.16
W/°C
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
–55 to 150
°C
300
100
A
50
mJ
2500
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W 2) Starting T_J = 25°C, L = 500µH, R_G = 25 , Peak I_L = 100A
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