SML10SIC03YC Datasheet, PDF (1/2 Pages) Seme LAB – SiC SCHOTTKY DIODE

SML10SIC03YC
TO257AA PACKAGE
SiC SCHOTTKY DIODE
case
1
2
3
V_R 300V
I_F 2x10A
Semelab’s Silicon Carbide (SiC) Schottky
diodes exhibit low forward voltage, zero
reverse recovery, and superb high-
temperature performance.
The devices employ Semelab’s proven
hermetic packaging technology and are
suitable for high-frequency hard-
switching applications, where system
efficiency and reliability are paramount.
ABSOLUTE MAXIMUM RATINGS at T_J = 25°C unless otherwise stated (per leg)
Symbol Parameter
Rating
V_R
V_RRM
V_RSM
I_F
I_FRM
I_FSM
P_D
T_J, T_stg
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Forward Current T_C = 100°C
Repetitive Peak Forward Current T_J = 150°C, T_C = 100°C, D = 0.1
Surge Peak Forward Current T_C = 25°C, tp = 10µs
Power Dissipation T_C = 25°C
Operating Junction and Storage Temperature
300
300
300
10
45
100
65W
-55 to +175
Units
V
V
V
A
A
A
W
°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by
Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or
omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 5351
Issue 1