SML10SIC03NJC Datasheet, PDF (1/2 Pages) Seme LAB – SiC SCHOTTKY DIODE

SML10SIC03NJC
SMD05 (TO-276AA) PACKAGE
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SiC SCHOTTKY DIODE
V_R 300V
I_F 2x10A
Semelab’s Silicon Carbide (SiC) Schottky
diodes exhibit low forward voltage, zero
reverse recovery, and superb high-
temperature performance.
The devices employ Semelab’s proven
hermetic packaging technology and are
suitable for high-frequency hard-
switching applications, where system
efficiency and reliability are paramount.
ABSOLUTE MAXIMUM RATINGS at T_J = 25°C unless otherwise stated (per leg)
Symbol Parameter
Rating
V_R
DC Reverse Voltage
300
V_RRM
Repetitive Peak Reverse Voltage
300
V_RSM
Surge Peak Reverse Voltage
300
I_F
DC Forward Current T_C = 100°C
10
I_FRM
Repetitive Peak Forward Current T_J = 150°C, T_C = 100°C, D = 0.1
45
I_FSM
P_D
T_J, T_stg
Surge Peak Forward Current T_C = 25°C, tp = 10 s
Power Dissipation T_C = 25°C
Operating Junction and Storage Temperature
100
70W
-55 to +175
Units
V
V
V
A
A
A
W
°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by
Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or
omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 6009
Issue 1