SML1004R2GXN Datasheet, PDF (1/2 Pages) Seme LAB – 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS

SEME
LAB
TO–257 Package Outline.
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56
3.81
(0.140)
(0.150)
Dia.
123
Pin 1 Gate
2.54 (0.100)
BSC
Pin 2 Drain
0.64
0.89
(0.025)
(0.035)
Dia.
3.05 (0.120)
BSC
Pin 3 Source
SML1004R2GXN
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
V_DSS
I_D(cont)
R_DS(on)
1000V
3.0A
4.20W
Pinout same as TO–220 Package.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
I_D
I_DM
V_GS
P_D
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Gate – Source Voltage
Total Power Dissipation @ T_case = 25°C
Linear Derating Factor
T_J , T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
STATIC ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
BV_DSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
m V_GS = 0V , I_D = 250 A
I_D(ON)
R_DS(ON)
On State Drain Current ²
Drain – Source On State Resistance ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
V_GS =10V , I_D = 0.5 I_D [Cont.]
I_DSS
I_GSS
V_GS(TH)
Zero Gate Voltage Drain Current
(V_GS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
V_DS = V_DSS
V_DS = 0.8V_DSS , T_C = 125°C
V_GS = ±30V , V_DS = 0V
V_DS = V_GS , I_D = 1.0mA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
m 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
1000
3.0
12
±30
100
0.8
–55 to 150
300
V
A
A
V
W
W / °C
°C
Min. Typ. Max. Unit
1000
V
3.0
A
4.20 W
250 _mA
1000
±100 nA
2
4V
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 5/94