SML1001RHN Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML1001RHN
SML901RHN0
TO–258 Package Outline.
Dimensions in mm (Inches)
17.65 (0.695)
17.39 (0.685)
6.86 (0.270)
6.09 (0.240)
1.14 (0.707)
0.88 (0.035)
123
4.19 (0.165)
3.94 (0.155)
Dia.
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
D
Pin 1 – Drain
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 2 – Source
3.56 (0.140)
BSC
Pin 3 – Gate
G
S
MAXIMUM RATINGS (T_case =25°C unless otherwise stated)
V_DSS
I_D
I_DM
V_GS
P_D
T_J , T_STJ
T_L
Parameter
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Gate – Source Voltage
Total Power Dissipation @ T_case = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Lead Tempeature (0.063” from Case for 10 Sec.)
SML
901RHN 1001RHN
900
1000
10
40
±30
250
2
–55 to +150°C
300
Unit
V
A
A
V
W
W/°C
°C
STATIC ELECTRICAL RATINGS (T_case =25°C unless otherwise stated)
Characteristic / Test Conditions / Part Number
BV_DSS Drain – Source Breakdown Voltage
V_GS = 0V
I_D = 250mA
SML1001RHN
SML901RHN
I_DSS
Zero Gate Voltage Drain Current
(V_GS = 0V)
V_DS = V_DSS
V_DS = 0.8V_DSS
T_C = 125°C
I_GSS Gate – Source Leakage Current
V_GS = ±30V
V_DS = 0V
I_D(ON) On State Drain Current ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
V_GS(TH) Gate Threshold Voltage
V_DS = V_GS I_D = 1.0mA
R_DS(ON) Static Drain – Source On State Resistance ² V_GS = 10V , I_D = 0.5 I_D [Cont.]
Min.
1000
900
Typ.
Max. Unit
V
250 _mA
1000
±100 nA
10
A
2
4V
1.00 W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
µ 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
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Prelim. 7/98