SML1001R1AN Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SEME
LAB
TO3 Package Outline.
Dimensions in mm (Inches)
SML1001R1AN 1000V 9.5A
SML901R1AN 900V 9.5A
SML1001R3AN 1000V 8.5A
SML901R3AN 900V 8.5A
1.10W
1.10W
1.30W
1.30W
POWER MOS IV™
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
MAXIMUM RATINGS (T_case =25°C unless otherwise stated)
Parameter
SML
901R1AN 1001R1AN 901R3AN 1001R3AN Unit
V_DSS
I_D
I_DM
V_GS
P_D
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Gate – Source Voltage
Total Power Dissipation @ T_case = 25°C
Derate above 25°C
900
1000
900
1000
V
9.5
8.5
A
38
34
A
±30
V
230
W
Operating and Storage Junction Temperature
T_J , T_{STJ Range}
–55 to 150
°C
STATIC ELECTRICAL RATINGS (T_case =25°C unless otherwise stated)
Characteristic / Test Conditions / Part Number
Drain – Source Breakdown Voltage
m ^BVDSS (V_GS = 0V , I_D = 250 A)
SML1001R1AN / SML1001R3AN
SML901R1AN / SML901R3AN
I_DSS Zero Gate Voltage Drain Current
(V_GS = 0V , V_DS = V_DSS)
(V_GS = 0V , V_DS = 0.8V_DSS , T_C = 125°C)
I_GSS
I_D(ON)
Gate – Source Leakage Current
On State Drain Current ²
(V_DS > I_D(ON) x R_DS(ON) Max , V_GS = 10V)
(V_GS = ±30V , V_DS = 0V)
SML1001R1AN / SML901R1AN
SML1001R1AN / SML901R3AN
V_GS(TH) Gate Threshold Voltage
Static Drain – Source On State Resistance ²
R_{DS(ON) (VGS =10V , ID = 0.5 ID [Cont.])}
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
m 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
Min.
1000
900
9.5
8.5
2
Typ. Max. Unit
V
250 _mA
1000
±100 nA
A
4V
1.1 _W
1.3
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 12/00