SML020DH12 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE

SILICON CARBIDE POWER
SCHOTTKY RECTIFIER DIODE
SML020DH12
• 1200V, 20A (2x10A) Rectifier Diodes
• High Temperature Operation Tj = 200°C
• Effective Zero Reverse and Forward Recovery
• High Frequency Operation
• High Speed Low Loss Switching
• High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated)
VRRM _{Repetitive Peak Reverse Breakdown Voltage}
1200V
VRSM
Surge Peak Reverse Voltage
1200V
VDC
DC Blocking Voltage
1200V
IF(AVG) _{Average Forward Current}
20A
IF(PEAK) Peak Forward Surge Current, Tc = 125°C
50A
PD
Power Dissipation (per leg)
116W
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +225°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
1.5
Units
°C/W
ELECTRICAL CHARACTERISTICS (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
Min.
VF ⁽¹⁾
IR
Forward Voltage
Reverse Current
IF = 10A
VR = VRRM
Tc = 175°C
Tc = 175°C
Typ.
1.6
2.5
10
20
Max.
1.8
3.0
200
1000
Units
V
µA
DYNAMIC CHARACTERISTICS (TC = 25°C unless otherwise stated)
QC
Total Capacitative
Charge
IF = 10A
di/dt = 500A/µs
VR = 1200V
TJ = 25°C
61
nC
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 8960
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 2