MJ4035 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON DARLINGTON NPN TRANSISTOR

SILICON DARLINGTON
NPN TRANSISTOR
MJ4035
• Monolithic Darlington Configuration With
Integrated Anti-Parallel Collector-Emitter Diode
• Hermetic TO3 Metal Package.
• Ideally Suited For General Purpose Switching
And Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
100V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
16A
IB
Base Current
0.5A
PD
Total Power Dissipation at ^{TC = 25°C}
150W
Derate Above 25°C
0.86W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
1.17 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8387
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