English
Language : 

IRFY9140C Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY9140C
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56
3.81
(0.140)
(0.150)
Dia.
123
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
-100V
-12A
0.21Ω
2.54 (0.100)
BSC
0.64
0.89
(0.025)
(0.035)
Dia.
3.05 (0.120)
BSC
TO–257AA – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED TO–257AA
METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
-12A
ID
Continuous Drain Current @ Tcase = 100°C
-8A
IDM
Pulsed Drain Current
-48A
PD
Power Dissipation @ Tcase = 25°C
60W
Linear Derating Factor
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95