IRFY430M Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

IRFY430M
IRFY430M
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3.56
3.81
Dia.
123
2.54
BSC
2.65
2.75
0.89
1.14
TO–220M – Metal Package
IRFY430
Pin 1 – Gate
IRFY430M
Pin 1 – Drain
Pin 2 – Drain Pin 3 – Source
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
500V
3.7A
1.6W
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 0 , T_case = 25°C)
3.7A
I_D
Continuous Drain Current (V_GS = 0 , T_case = 100°C)
2.4A
I_DM
Pulsed Drain Current ¹
14A
P_D
Power Dissipation @ T_case = 25°C
45W
Linear Derating Factor
0.36W/°C
T_J , T_stg
T_L
R_qJC
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
–55 to 150°C
300°C
1.67°C/W max.
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 6/99