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| IRFY430M-T257 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |||
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IRFY430M-T257
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56
3.81
(0.140)
(0.150)
Dia.
123
NâCHANNEL
POWER MOSFET
FOR HIâREL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
500V
4.5A
1.65W
2.54 (0.100)
BSC
0.64
0.89
(0.025)
(0.035)
Dia.
3.05 (0.120)
BSC
TO257AA â Metal Package
Pin 1 â Drain
Pin 2 â Source
Pin 3 â Gate
FEATURES
⢠HERMETICALLY SEALED TO257 METAL
PACKAGE
⢠SIMPLE DRIVE REQUIREMENTS
⢠LIGHTWEIGHT
⢠SCREENING OPTIONS AVAILABLE
⢠ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate â Source Voltage
±20V
ID
Continuous Drain Current (VGS = 10V , Tcase = 25°C)
4.5A
ID
Continuous Drain Current (VGS = 10V , Tcase = 100°C)
2.8A
IDM
Pulsed Drain Current 1
18A
PD
Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
TJ , Tstg
TL
RqJC
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
â55 to 150°C
300°C
1.67°C/W max.
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 1/00
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