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IRFY044 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
IRFY044
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3.56
3.81
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
60V
20A
0.035Ω
2.54
BSC
2.65
2.75
0.89
1.14
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current
PD
Power Dissipation @ TC = 25°C
Linear Derating Factor
±20V
20A
20A
128A
60W
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95