IRFNJ130N Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL POWER MOSFET

IRFNJ130N
IRFN130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
1
3
0.127 (0.005)
3.175 (0.125)
Max.
2
16 PLCS
0.50(0.020)
0.127 (0.005)
0.127 (0.005)
7.26 (0.286)
SMD05 (TO-276AA)
0.50 (0.020)
max.
IRFNJ130
PAD1 = GATE
PAD 2 DRAIN PAD3 = SOURCE
IRFN130SMD05
PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
100V
11A
0.19Ω
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
11A
I_D
Continuous Drain Current @ T_case = 100°C
7A
I_DM
Pulsed Drain Current
44A
P_D
Power Dissipation @ T_case = 25°C
45W
Linear Derating Factor
0.36W/°C
T_J , T_stg
R_θJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 5831
Issue 1