IRFN3710 Datasheet, PDF (1/2 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)

IRFN3710
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
3 .6 0 (0 .1 4 2 )
M ax.
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
100V
45A
0.028Ω
FEATURES
2
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
SMD 1 PACKAGE (TO-276AB)
• HIGH PACKING DENSITIES
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note: IRF3710SMD also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 0 , T_case = 25°C)
45A
I_D
Continuous Drain Current (V_GS = 0 , T_case = 100°C)
30A
I_DM
Pulsed Drain Current ¹
180A
P_D
Power Dissipation @ T_case = 25°C
125W
Linear Derating Factor
1.0W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
250mJ
3.7V/ns
T_J , T_stg
T_L
R_θJC
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
–55 to 150°C
300°C
1.0°C/W
Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) @ V_DD = 25V , L ≥ 0.64mH , Peak I_AS = 28A ,VGS = 10V, RG = 25Ω, Starting T_J = 25°C
3) @ I_SD ≤ 28A , di/dt ≤ 390A/μs , V_DD ≤ 100V , T_J ≤ 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5586
Issue 1