IRFN250SMD Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFN250SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
3 .6 0 (0 .1 4 2 )
M ax.
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
FEATURES
200V
14A
0.100W
2
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD PACKAGE
Pad 1 – Source
Pad 2 – Drain
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pad 3 – Gate
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 0 , T_case = 25°C)
22A
I_D
Continuous Drain Current (V_GS = 0 , T_case = 100°C)
14A
I_DM
Pulsed Drain Current ¹
88A
P_D
Power Dissipation @ T_case = 25°C
100W
Linear Derating Factor
0.8W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
500mJ
5.0V/ns
T_J , T_stg
T_L
R_qJC
R_qJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.25°C/W
3°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ V_DD = 50V , L ³ 1.5mH , R_G = 25W , Peak I_L = 22A , Starting T_J = 25°C
3) @ I_SD £ 22A , di/dt £ 190A/ms , V_DD £ BV_DSS , T_J £ 150°C , SUGGESTED R_G = 2.35W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 7/00