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IRFN130SMD Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
IRFN130SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
2
Pad 1 – Source
SMD1
Pad 2 – Drain
Pad 3 – Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
100V
11A
0.19W
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
* Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
11A
ID
Continuous Drain Current @ Tcase = 100°C
7A
IDM
Pulsed Drain Current
44A
PD
Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
RqJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 7/00