IRFM540 Datasheet, PDF (1/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET

N-CHANNEL
POWER MOSFET
IRFM540
• Low RDS(on) MOSFET Transistor
In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
100V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
18A
ID
Continuous Drain Current ^{Tc = 100°C}
12A
IDM
Pulsed Drain Current ⁽¹⁾
72A
PD
Total Power Dissipation at ^{Tc = 25°C}
78W
Derate Above 25°C
0.62W/°C
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
1.6 °C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 2613
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 3