IRFM5210 Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL MOSFET

IRFM5210
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
P–CHANNEL MOSFET
IN A TO254
FOR HIGH RELIABILITY
APPLICATIONS.
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
Pin 1 –Drain
TO-254AA
Pin 2 – Source
3.81 (0.150)
BSC
Pin 3 – Gate
V_DSS
I_D
R_DS(on)
100V
34A
0.07Ω
FEATURES
• FAST SWITCHING
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(T_case = 25°C)
-34A
I_D
Continuous Drain Current
(T_case = 100°C)
I_DM
Pulsed Drain Current ¹
-21A
-136A
P_D
Power Dissipation
125W
Linear Derating Factor
1.0W/°C
E_AS
Single Pulse Avalanche Energy ²
E_AR
Repetitive Avalanche Energy ¹
520mJ
12mJ
T_J , T_stg
Operating Junction and Storage Temperature Range
–55 to +150°C
R_θJC
Junction – Case Thermal Resistance
1.0W/°C
Notes
1) Repetitive rating; pulse width limited by max. junction temperature.
2) V_DD = –25V , L = 3.5mH , R_G = 25Ω , I_AS = –21A , Starting T_J = 25°C, V_GS = –10V
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 2612
Issue 1