IRFM450 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFM450
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
500V
12A
0.415Ω
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 25°C)
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
P_D
Power Dissipation @ T_case = 25°C
Linear Derating Factor
±20V
12A
8A
48A
150W
1.2W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
750mJ
12A
15mJ
3.5V/ns
T_J , T_stg Operating and Storage Temperature Range
T_L
Lead Temperature measured ^1/16” (1.6mm) from case for 10 sec.
R_θJC
Thermal Resistance Junction to Case
R_θCS
Thermal Resistance Case to Sink (Typical)
R_θJA
Thermal Resistance Junction to Ambient
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V_DD = 50V , L ≥ 9.4mH , R_G = 25Ω , Peak I_L = 12A , Starting T_J = 25°C
3) @ I_SD ≤ 12A , di/dt ≤ 130A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 2.35Ω
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 10/95