IRFM350 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFM350
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
400V
14A
0.315W
FEATURES
123
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
• HERMETIC ISOLATED TO-254 PACKAGE
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current
P_D
Max. Power Dissipation
Linear Derating Factor
@ V_GS = 10V , T_C = 25°C
@ V_GS = 10V , T_C = 100°C
@ T_C = 25°C
±20V
14A
9.0A
56A
150W
1.2W / °C
I_L
dv / dt
Avalanche Current , Clamped ¹
Peak Diode Recovery ²
14A
4V / ns
R_qJC
R_qJA
R_qCS
T_J , T_STG
T_L
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
1)
V_DD = 50V , Starting T_J = 25°C , L ³ 1mH , R_G = 25W , Peak I_L = 27.4A
2)
I_SD £ 27.4A , di/dt £ 190A / mS , V_DD £ BV_DSS , T_J £ 150°C , Suggested R_G = 2.35W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 05/00