IRFM250 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFM250
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
N–CHANNEL
POWER MOSFET
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
V_DSS
I_D(cont)
R_DS(on)
200V
27.4A
0.100Ω
FEATURES
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PACKAGE
3.81 (0.150)
BSC
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current
P_D
Max. Power Dissipation
Linear Derating Factor
@ V_GS = 10V , T_C = 25°C
@ V_GS = 10V , T_C = 100°C
@ T_C = 25°C
±20V
27.4A
17A
110A
150W
1.2W / °C
I_L
dv / dt
Avalanche Current , Clamped ¹
Peak Diode Recovery ²
27.4A
5.5V / ns
R_θJC
R_θJA
R_θCS
T_J , T_STG
T_L
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
1)
V_DD = 50V , Starting T_J = 25°C , L ≥ 1mH , R_G = 25Ω , Peak I_L = 27.4A
2)
I_SD ≤ 27.4A , di/dt ≤ 190A / µS , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 2.35Ω
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 9/95