IRFM140 Datasheet, PDF (1/3 Pages) International Rectifier – HEXFET TRANSISTOR

N-CHANNEL
POWER MOSFET
IRFM140 / 2N7218
• Low RDS(on) MOSFET Transistor
In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
100V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
28A
ID
Continuous Drain Current ^{Tc = 100°C}
20A
IDM
Pulsed Drain Current ⁽¹⁾
112A
PD
Total Power Dissipation at ^{Tc = 25°C}
100W
Derate Above 25°C
0.8W/°C
EAS
Single Pulse Avalanche Energy⁽²⁾
250mJ
dv/dt
Peak Diode Recovery⁽³⁾
5.5V/ns
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
1.25 °C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C
(3) @ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
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