IRFM1310ST Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFM1310ST
MECHANICAL DATA
Dimensions in mm (inches)
2 6 .4 2
(1 .0 4 0 )
2 0 .0 7
(0 .7 9 0 )
1 3 .7 2
(0 .5 4 0 )
1 .0 2
3 .8 1 ^{(0 .0 4 0 )}
(0 .1 5 0 )
2 p lc s .
TO–254Z – Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
100V
34A
0.070W
FEATURES
• REPETITIVE AVALANCHE RATING
• ISOLATED AND HERMETICALLY SEALED
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current (V_GS = 10V , T_case = 25°C)
I_D
Continuous Drain Current (V_GS = 10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
P_D
Power Dissipation @ T_case = 25°C
Linear Derating Factor
±20V
34A
21A
136A
150W
1.2W/°C
T_J , T_stg
R_qJC
R_qJCS
R_qJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink(Typical)
Thermal Resistance Junction-to-Ambient
–55 to 150°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ V_DD = 25V , L ³ 200mH , R_G = 25W , Peak I_L = 34A , Starting T_J = 25°C
3) @ I_SD £ 34A , di/dt £ 70A/ms , V_DD £ BV_DSS , T_J £ 150°C , Suggested R_G = 2.35W
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