IRFM054 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFM054
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
60V
35A *
0.027Ω
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 25°C)
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
P_D
Power Dissipation @ T_case = 25°C
Linear Derating Factor
±20V
35A*
35A
220A
150W
1.2W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
480mJ
4.5V/ns
T_J , T_stg
T_L
R_θJC
R_θCS
R_θJA
Operating and Storage Temperature Range
Lead Temperature measured ^1/16” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V_DD = 25V , L ≥ 450µH , R_G = 25Ω , Peak I_L = 35A , Starting T_J = 25°C
3) @ I_SD ≤ 35A , di/dt ≤ 200A/µs , V_DD ≤ BV_DSS , T_J ≤ 125°C , SUGGESTED R_G = 2.35Ω
* I_D Current limited by pin diameter.
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 11/94