IRFJ240 Datasheet, PDF (1/2 Pages) Seme LAB – N - CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

IRFJ240
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
6.35 (0.250)
8.64 (0.340)
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
200V
13A
0.18Ω
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
TO-66 METAL PACKAGE (TO213AA)
Underside View
Pin 1 = Gate
Pin 2 = Source
Case = Drain
FEATURES
• HERMETICALLY SEALED TO-66 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
13A
I_D
Continuous Drain Current @ T_case = 100°C
8A
I_DM
Pulsed Drain Current
50A
P_D
Power Dissipation @ T_case = 25°C
70W
Linear Derating Factor
0.56W/°C
T_J , T_stg
R_θJC
R_θJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
1.8°C/W max.
50°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 5265
Issue 1