IRFF9130_11 Datasheet, PDF (1/3 Pages) Seme LAB – P-CHANNEL POWER MOSFET

P-CHANNEL
POWER MOSFET
IRFF9130 / 2N6849
• MOSFET Transistor In A Hermetic Metal TO-205AF Package
• Single Pulse Avalanche Energy Rated
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
-100V
VDG
Drain – Gate Voltage
RGS = 20KΩ
-100V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
-6.5A
ID
Continuous Drain Current ^{Tc = 100°C}
-4.1A
IDM
Pulsed Drain Current ⁽¹⁾
-25A
PD
Total Power Dissipation at ^{Tc = 25°C}
25W
Derate Above 25°C
0.2W/°C
EAS
Single Pulse Avalanche Energy ⁽²⁾⁽⁴⁾
500mJ
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
R_θJA
Thermal Resistance, Junction To Ambient
Max.
5
175
Units
°C/W
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters
LS + LD
Total Inductance
Typ.
7
Units
nH
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = -25V, Starting TJ = 25°C, L = 17.25mH, Peak IL = -6.5A, VGS = -10V
(3) Pulse Width ≤ 300us, δ ≤ 2%
(4) By Design Only, Not A Production Test.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 3098
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