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IRFF420 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET
IRFF420
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
N–CHANNEL
POWER MOSFET
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
BVDSS
ID(cont)
RDS(on)
500V
1.5
3.0W
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )

!
2 .5 4
(0 .1 0 0 )
45°
TO39 – Package
Pin 1 – Source Pin 2 – Gate Pin 3 – Drain
Also available in a low profile version.
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current (VGS = 10V , Tcase = 25°C)
1.5A
ID
Continuous Drain Current (VGS = 10V , Tcase = 100°C)
1A
IDM
Pulsed Drain Current 1
6.5A
PD
Power Dissipation @ Tcase = 25°C
20W
Linear Derating Factor
0.16W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
0.11mJ
3.5V/ns
TJ , Tstg
RqJC
RqJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 0.100mH , RG = 25W , Peak IL = 1.5A , Starting TJ = 25°C
3) @ ISD £ 1.5A , di/dt £ 50A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
4/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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