IRFF230 Datasheet, PDF (1/2 Pages) Intersil Corporation – 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

IRFF230
2N6798
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
1
3
2.54
(0.100)
45°
TO–39 PACKAGE (TO-205AF)
Underside View
PIN 1 – Source PIN 2 – Gate
PIN 3 – Drain
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
FEATURES
• V_(BR)DSS = 200V
• I_D = 5.5A
• R_DSON = 0.40Ω
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
Drain–Source Voltage
200V
V_GS
Gate–Source Voltage
±20V
I_D
Drain Current Continuous T_Case = 25°C
5.5A
T_Case = 100°C
3.5A
I_DM
Drain Current Pulsed
22A
P_D
Total Device Dissipation @ T_Case = 25°C
25W
T_Case = 100°C
10W
T_J , T_STG
Operating and Storage Junction Temperature Range
–55 to +150°C
THERMAL CHARACTERISTICS
R_θJC
R_θJA
T_L
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.6mm from Case for
10 secs.
5.0°C/W
175°C/W
300°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3096
Issue 3