IRFE9110 Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRFE9110
MECHANICAL DATA
Dimensions in mm (inches)
1.27 (0.050)
1.07 (0.040)
11
7.62 (0.300) ¹⁰
7.12 (0.280)
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43 (0.017)
0.18 (0.007 ^Rad.
≈ 2.16 (0.085)
MOSFET
GATE
DRAIN
SOURCE
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
P–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
-100V
-2.2A
1.2W
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• _{LIGHT WEIGHT}
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
– 2.2A
I_D
Continuous Drain Current @ T_case = 100°C
– 1.4A
I_DM
Pulsed Drain Current
– 8.8A
P_D
Power Dissipation @ T_case = 25°C
11W
Linear Derating Factor
0.090W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
87mJ
– 5.5V/ns
T_J , T_stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
– 55 to +150°C
300°C
Semelab plc. Telephone [phone]. Fax [phone].
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