IRF460 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

IRF460
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
Pin 1 – Gate
2
3
(case)
3.84 (0.151)
4.09 (0.161)
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Case – Drain
V_DSS
I_D(cont)
R_DS(on)
500V
21A
0.27Ω
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
Total Power Dissipation @ T_case = 25°C
P_D
Derate Linearly
T_J , T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
STATIC ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
Characteristic
Test Conditions
BV_DSS
Drain – Source Breakdown Voltage
V_GS = 0V , I_D = 1mA
I_DSS
Zero Gate Voltage Drain Current
(V_GS = 0V)
V_DS = V_DSS
V_DS = 0.8V_DSS , T_C = 125°C
I_GSS
Gate – Source Leakage Current
V_GS = ±20V , V_DS = 0V
V_{GS(TH) Gate Threshold Voltage}
V_DS = V_GS , I_D = 250µA
I_D(ON)
On State Drain Current ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
R_{DS(ON) Drain – Source On State Resistance} 2
V_GS = 10V , I_D = 13A
V_GS = 10V , I_D = 21A
500
21
84
±20
300
2.4
–55 to 150
300
V
A
A
V
W
W/°C
°C
Min.
500
2
Typ. Max. Unit
V
25
µA
250
±100 nA
4V
21
A
0.27
Ω
0.31
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]
Website http://www.semelab.co.uk
Prelim. 11/98