IRF450_10 Datasheet, PDF (1/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET

N-CHANNEL
POWER MOSFET
IRF450
• Hermeticaly Sealed TO-3 Metal Package
• Simple Drive Requirements
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
500V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
13A
ID
Continuous Drain Current ^{Tc = 100°C}
8A
IDM
Pulsed Drain Current ⁽²⁾
52A
PD
Total Power Dissipation at ^{Tc = 25°C}
150W
Derate Above 25°C
1.2W/°C
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
R_θJA
Thermal Resistance, Junction To Ambient
Max.
0.83
30
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters
LD
Internal Drain Inductance
LS
Internal Source Inductance
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) Repetitive Rating: Pulse Width limited by max. junction temperature.
Typ.
5
13
Units
nH
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 9118
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