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| IRF450 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS | |||
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IRF450
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
NâCHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
500V
13A
0.4W
20.32 (0.800)
18.80 (0.740)
dia.
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TOâ3 Metal Package
Pin 1 â Gate
Pin 2 â Source
Case â Drain
FEATURES
⢠HERMETICALLY SEALED TOâ3 METAL
PACKAGE
⢠SIMPLE DRIVE REQUIREMENTS
⢠SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate â Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
12A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
IDM
Pulsed Drain Current 1
7.75A
48A
PD
Power Dissipation @ Tcase = 25°C
150W
Linear Derating Factor
1.2W/°C
EAS
IAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 2
Peak Diode Recovery 3
8.0mJ
12A
3.5V/ns
TJ , Tstg
TL
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63â) from case for 10 sec.
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 25V , L ³ 480mH , RG = 25W , Peak IL = 28A , Starting TJ = 25°C
3) @ ISD £ 28A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 9.1W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 10/99
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