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| IRF430 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS | |||
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IRF430
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
2
11.18 (0.440)
10.67 (0.420)
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) 11.18 (0.44)
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
16.97 (0.668)
16.87 (0.664)
TOâ3 Metal Package
Pin 1 â Gate
Pin 2 â Source
Case â Drain
NâCHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
500V
4.5A
1.5W
FEATURES
⢠HERMETICALLY SEALED TOâ3 METAL
PACKAGE
⢠SIMPLE DRIVE REQUIREMENTS
⢠SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate â Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
4.5A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
3A
IDM
Pulsed Drain Current 1
18A
PD
Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
EAS
IAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 2
Peak Diode Recovery 3
1.1mJ
4.5A
3.5V/ns
TJ , Tstg
TL
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63â) from case for 10 sec.
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 100mH , RG = 25W , Peak IL = 4.5A , Starting TJ = 25°C
3) @ ISD £ 4.5A , di/dt £ 75A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00
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