IRF350 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

IRF350
2N6768
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
N-CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
400V
14A
0.300Ω
FEATURES
• REPETITIVE AVALANCHE RATINGS
20.32 (0.800)
18.80 (0.740)
dia.
• DYNAMIC DV/DT RATING
• HERMETICALL SEALED
• SIMPLE DRIVE REQUIREMENTS
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
• EASE OF PARALLELING
TO–3 (TO-204AA) Metal Package
Pin 1 – Source
Pin 2 – Gate
Case – Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 25°C)
14A
(V_GS = 0 , T_case = 100°C)
9.0A
I_DM
Pulsed Drain Current ¹
56A
P_D
Power Dissipation @ T_case = 25°C
150W
Linear Derating Factor
1.2W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ³
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ⁴
11.3mJ
14A
15mJ
4.0V/ns
T_J , T_stg
Operating and Storage Temperature Range
-55 to +150°C
Notes
1) Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
3) VDD = 50V ,Peak IL = 14A , Starting TJ = 25°C
4) ISD ≤ 14A , di/dt ≤ 145A/μs , VDD ≤ 400V, TJ ≤ 150°C , Suggested RG = 2.35Ω
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Document Number 6252
Issue 1