IRF330 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

N-CHANNEL
POWER MOSFET
IRF330 / 2N6760
• Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
• High Input Impedance / RDS(on) < 1.0Ω
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
400V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
5.5A
ID
Continuous Drain Current ^{Tc = 100°C}
3.5A
IDM
Pulsed Drain Current ⁽¹⁾
22A
PD
Total Power Dissipation at ^{Tc = 25°C}
75W
Derate Above 25°C
0.6W/°C
EAS
Single Pulse Avalanche Energy ⁽²⁾
1.7mJ
IAR
Avalanche Current ⁽¹⁾
5.5A
dv/dt
Peak Diode Recovery ⁽³⁾
4V/ns
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
TL
Lead Temperature (1.6mm (0.063”) from case for 10sec)
300°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
1.67
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters
LS + LD
Total Inductance
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3) @ ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
Typ.
6.1
Units
nH
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 9142
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 3