IRF250 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

IRF250
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
200V
30A
0.085Ω
1
20.32 (0.800)
18.80 (0.740)
dia.
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 25°C)
30A
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 100°C)
19A
I_DM
Pulsed Drain Current ¹
120A
P_D
Power Dissipation @ T_case = 25°C
150W
Linear Derating Factor
1.2W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ²
Repetitive Avalanche Energy ²
Peak Diode Recovery ³
200mJ
30A
15mJ
5V/ns
T_J , T_stg
T_L
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
–55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%.
2) @ V_DD = 50V , L ≥ 330mH , R_G = 25Ω , Peak I_L = 30A , Starting T_J = 25°C.
3) @ I_SD ≤ 30A , di/dt ≤ 190A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 2.35Ω
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 9/96