IRF240 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET

IRF240
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
2
11.18 (0.440)
10.67 (0.420)
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) _{11.18 (0.44)}
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
16.97 (0.668)
16.87 (0.664)
TO3 METAL PACKAGE
Pin 1 = Source Pin 2 Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
200V
18A
0.18W
FEATURES
• HERMETICALLY SEALED TO3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
18A
I_D
Continuous Drain Current @ T_case = 100°C
11A
I_DM
Pulsed Drain Current
72A
P_D
Power Dissipation @ T_case = 25°C
125W
Linear Derating Factor
1.0W/°C
T_J , T_stg
R_qJC
R_qJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
1.0°C/W max.
30°C/W max.
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Prelim. 6/00