IRF230 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFET
1
2
Pin 1 – Gate
3
(case)
3.84 (0.151)
4.09 (0.161)
Pin 2 – Source
7.92 (0.312)
12.70 (0.50)
Case – Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage¹
V_DGR
I_D
I_D
I_DM
Drain - Gate Voltage (R_GS = 20KW)¹
Continuous Drain Current@ T_case = 25°C
Continuous Drain Current@ T_case = 100°C
Pulsed Drain Current ³
V_GS
Gate – Source Voltage
P_D
Maximum Power Dissipation @ T_case = 25°C
Derate Linearly
I_LM
Inductive Current Clamped
E_AS*
Single Pulse Avalanche energy Rating ⁴
T_J , T_{STG Operating and Storage Junction Temperature Range}
T_L
Lead Temperature : 0.063” from Case for 10 Sec.
200
V
200
V
9.0
A
6.0
A
36
A
±20
V
75
W
0.6 W/°C
36
A
150
mj
–55 to 150 °C
300
°C
THERMAL CHARACTERISTICS
Characteristic
R_qJC
Junction to Case
R_qCS
Case to Sink (Mounting Surface flat, smooth and greased.
R_qJA
Junction to Ambient (Free air operation)
NOTES
1 T_J = +25°C to + 150°C
2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2%
3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.
4 V_DD = 20V starting TJ = +25°C , L = 3.37mH, R_GS = 50W, I_PEAK = 9A
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Min.
Typ.
0.1
Max. Unit
1.67
°C/W
30
Prelim. 6/00