IRF130SMD05N Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS

IRF130SMD05N
IRFN130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7 .5 4 (0 .2 9 6 )
0 .7 6 (0 .0 3 0 )
m in .
2 .4 1 (0 .0 9 5 )
2 .4 1 (0 .0 9 5 )

!
0 .1 2 7 (0 .0 0 5 )
3 .1 7 5 (0 .1 2 5 )
M ax.
0 .1 2 7 (0 .0 0 5 )
16 P LC S
0 .5 0 (0 .0 2 0 )
7 .2 6 (0 .2 8 6 )
0 .1 2 7 (0 .0 0 5 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
IRF130SMD05
SMD 05
PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE
IRFN130SMD05
PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
100V
11A
0.19W
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
11A
I_D
Continuous Drain Current @ T_case = 100°C
7A
I_DM
Pulsed Drain Current
44A
P_D
Power Dissipation @ T_case = 25°C
45W
Linear Derating Factor
0.36W/°C
T_J , T_stg
R_qJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
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Prelim. 10/00